# Memory Storage

SanDisk’s Vertical Leap: The 332-Layer Breakthrough in the Global Memory Race

SanDisk has introduced its 10th-generation BiCS10 3D NAND flash memory, featuring a record-breaking 332-layer architecture and 1Tb TLC capacity. The technology integrates DDR6.0 and advanced power-saving protocols to meet the high-performance demands of AI and data center applications.