# Third-Generation Semiconductors

China’s Tiancheng Semiconductor Breaks Size Barriers with 14-Inch Silicon Carbide Milestone

Tiancheng Semiconductor has developed a 14-inch silicon carbide single crystal with a 30mm thickness, marking a major advancement in third-generation semiconductor materials. This breakthrough follows the company’s 12-inch success and aims to significantly enhance the manufacturing efficiency of high-power electronics used in EVs and industrial equipment.